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MJD112G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR MJD112G

MJD Series 100 V 2 A NPN Complementary Darlington Power Transistor - TO-252-3


Ordering Info

In Stock: 9450 Delivery

MOQ: 525

Package Quantity: 75

HTS Code: 8541.29.00

ECCN: EAR99

COO: VN

Quantity Cost
525-9449 $0.2929
9450+ $0.2733


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Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 2
Collector-emitter Voltage-Max 100
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 200
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 20
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 25