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MMBD352LT1 | ON SEMICONDUCTOR

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ON SEMICONDUCTOR MMBD352LT1

SILICON UHF BAND MIXER DIODE


Ordering Info

In Stock: 450

MOQ: 1

Package Quantity: 1

Quantity Cost
1 -

Electrical Characteristics

Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Capacitance-Max 1
Diode Element Material SILICON
Diode Type MIXER DIODE
Frequency Band ULTRA HIGH FREQUENCY
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 3
Operating Temperature-Max 125
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Power Dissipation-Max 0.225
Qualification Status Not Qualified
Sub Category Microwave Mixer Diodes
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30