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2N7002BKW,115 | NEXPERIA

NEXPERIA 2N7002BKW,115

2N7002BKW Series N-Channel 60 V 1.6 Ohm 275 mW 0.5nC SMT TrenchMOS FET - SOT-323

Ordering Info

In Stock: 57000 Locations

MOQ: 6000

Package Quantity: 3000

COO: MY


Quantity Cost
6000-56999 $0.0317
57000+ $0.0296


Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
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Electrical Characteristics

Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (ID) .31
Drain-source On Resistance-Max 1.6
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON