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IRFH5006TRPBF | INFINEON

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INFINEON IRFH5006TRPBF

Single N-Channel 60 V 4.1 mOhm 69 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm


Ordering Info

In Stock: 0

MOQ: 4000

Package Quantity: 4000

COO: CN

Subject to tariff fees

Quantity Cost
4000 -

Electrical Characteristics

Avalanche Energy Rating (Eas) 285
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 21
Drain Current-Max (ID) 21
Drain-source On Resistance-Max 0.0041
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250
Pulsed Drain Current-Max (IDM) 400
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON