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2N7002,215 | NEXPERIA

NEXPERIA 2N7002,215

2N7002 Series N-Channel 60 V 5 Ohm 0.83 W TrenchMOS FET - SOT-23

Ordering Info

In Stock: 1218000 Locations

MOQ: 9000

Package Quantity: 3000

COO: CN

Subject to tariff fees


Quantity Cost
9000-1217999 $0.0226
1218000+ $0.0211


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Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (ID) .3
Drain-source On Resistance-Max 5
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON