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2N7002P,215 | NEXPERIA

NEXPERIA 2N7002P,215

2N7002P Series N-Channel 60 V 1.6 Ohm 350 mW 0.8 nC SMT TrenchMOS FET - SOT-23

Ordering Info

In Stock: 774000 Locations

MOQ: 9000

Package Quantity: 3000

Subject to tariff fees


Quantity Cost
9000-773999 $0.0186
774000+ $0.0173


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Electrical Characteristics

Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (ID) .36
Drain-source On Resistance-Max 1.6
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON