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DMG2305UX-13 | DIODES INC.

DIODES INC. DMG2305UX-13

P-Channel 20 V 65 Ohms Surface Mount Enhancement Mode Mosfet - SOT-23-3


Ordering Info

In Stock: 1390000 Locations

MOQ: 10000

Package Quantity: 10000

COO: CN

Subject to tariff fees

Quantity Cost
10000-1389999 $0.0609
1390000+ $0.0568


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Electrical Characteristics

Additional Feature HIGH RELIABILITY
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20
Drain Current-Max (Abs) (ID) 4.2
Drain Current-Max (ID) 4.2
Drain-source On Resistance-Max .052
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.4
Pulsed Drain Current-Max (IDM) 10
Reference Standard AEC-Q101
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON