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IRF540NSTRLPBF | INFINEON

INFINEON IRF540NSTRLPBF

Single N-Channel 100V 44 mOhm 71 nC HEXFET® Power Mosfet - D2PAK


Ordering Info

In Stock: 18078 Locations

MOQ: 800

Package Quantity: 800

COO: CN

Subject to tariff fees

Quantity Cost
800-18077 $0.5929
18078+ $0.5533


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Electrical Characteristics

Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 185
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100
Drain Current-Max (Abs) (ID) 33
Drain Current-Max (ID) 33
Drain-source On Resistance-Max 0.044
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 130
Pulsed Drain Current-Max (IDM) 110
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON