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IRF640NPBF | INFINEON

INFINEON IRF640NPBF

Single N-Channel 200 V 0.15 Ohm 67 nC HEXFET® Power Mosfet - TO-220-3


Ordering Info

In Stock: 1946 Locations

MOQ: 328

Package Quantity: 1

COO: CN

Subject to tariff fees

Quantity Cost
328-1945 $0.4357
1946+ $0.4067


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Electrical Characteristics

Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 247
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200
Drain Current-Max (Abs) (ID) 18
Drain Current-Max (ID) 18
Drain-source On Resistance-Max 0.15
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150
Pulsed Drain Current-Max (IDM) 72
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON