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IRF7341TRPBF | INFINEON

INFINEON IRF7341TRPBF

55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

Ordering Info

In Stock: 280000 Locations

MOQ: 4000

Package Quantity: 4000

COO: CN

Subject to tariff fees


Quantity Cost
4000-279999 $0.2996
280000+ $0.2788


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Electrical Characteristics

Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 140
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55
Drain Current-Max (Abs) (ID) 4.7
Drain Current-Max (ID) 5.1
Drain-source On Resistance-Max 0.05
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2
Pulsed Drain Current-Max (IDM) 42
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON