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NJVMJD122T4G-VF01 | ON SEMICONDUCTOR

ON SEMICONDUCTOR NJVMJD122T4G-VF01

NJVMJD122 Series 100 V 8 A Complementary Darlington Power Transistor - DPAK-3

Ordering Info

In Stock: 55000 Locations

MOQ: 2500

Package Quantity: 2500

Subject to tariff fees


Quantity Cost
2500-54999 $0.4286
55000+ $0.40


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Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 8
Collector-emitter Voltage-Max 100
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 100
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON