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NTD2955T4G | ON SEMICONDUCTOR

ON SEMICONDUCTOR NTD2955T4G

Single P-Channel 60 V 0.18 Ohm 30 nC 55 W Silicon SMT Mosfet - TO-252-3

Ordering Info

In Stock: 63118 Locations

MOQ: 2500

Package Quantity: 2500

Subject to tariff fees


Quantity Cost
2500-63117 $0.3214
63118+ $0.30


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Electrical Characteristics

Avalanche Energy Rating (Eas) 216
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 12
Drain Current-Max (ID) 12
Drain-source On Resistance-Max 0.18
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 55
Pulsed Drain Current-Max (IDM) 18
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON