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NTF3055L108T1G | ON SEMICONDUCTOR

ON SEMICONDUCTOR NTF3055L108T1G

N-Channel 60 V 120 mOhm 1.3 W Surface Mount Power MOSFET - SOT-223


Ordering Info

In Stock: 163000 Locations

MOQ: 1000

Package Quantity: 1000

COO: CN

Subject to tariff fees

Quantity Cost
1000-162999 $0.3429
163000+ $0.32


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Electrical Characteristics

Avalanche Energy Rating (Eas) 74
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 3
Drain Current-Max (ID) 3
Drain-source On Resistance-Max 0.12
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.1
Pulsed Drain Current-Max (IDM) 9
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON