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STP12NM50FP | ST MICROELECTRONICS

ST MICROELECTRONICS STP12NM50FP

N-Channel 550 V 0.35 Ohm Flange Mount MDmesh™ Power MosFet - TO-220FP

Ordering Info

In Stock: 1850 Locations

MOQ: 600

Package Quantity: 50

Quantity Cost
600-1849 $1.18
1850+ $1.10




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Electrical Characteristics

Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 400
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500
Drain Current-Max (Abs) (ID) 12
Drain Current-Max (ID) 12
Drain-source On Resistance-Max 0.35
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 35
Pulsed Drain Current-Max (IDM) 48
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Ma NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON





Location Stock Delivery
Europe 1850 Ships in 3-5 days