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STW11NK100Z | ST MICROELECTRONICS

ST MICROELECTRONICS STW11NK100Z

TO247/N-CHANNEL 1000V 1.1 OHM 8.3A POWER MOSFET


Ordering Info

In Stock: 4320 Locations

MOQ: 120

Package Quantity: 30

COO: CN

Subject to tariff fees

Quantity Cost
120-4319 $1.66
4320+ $1.55


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Electrical Characteristics

Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Avalanche Energy Rating (Eas) 550
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000
Drain Current-Max (Abs) (ID) 9
Drain Current-Max (ID) 8.3
Drain-source On Resistance-Max 1.38
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 230
Pulsed Drain Current-Max (IDM) 33.2
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON