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ZVN2106A | DIODES INC.

DIODES INC. ZVN2106A

N-Channel 60 V 2 Ohm Enhancement Mode Vertical DMOS FET- TO-92

Ordering Info

In Stock: 2100 Locations

MOQ: 569

Package Quantity: 1

Subject to tariff fees


Quantity Cost
569-2099 $0.2514
2100+ $0.2347


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Electrical Characteristics

Configuration SINGLE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) .45
Drain Current-Max (ID) .45
Drain-source On Resistance-Max 2
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 20
JESD-30 Code O-PBCY-W3
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) .7
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form WIRE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 40
Transistor Element Material SILICON