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ZXMP6A17GTA | DIODES INC.

DIODES INC. ZXMP6A17GTA

ZXMP6A17G Series 60 V 0.125 Ohm P-Channel Enhancement Mode MOSFET - SOT-223

Ordering Info

In Stock: 132000 Locations

MOQ: 1000

Package Quantity: 1000

Quantity Cost
1000-131999 $0.2314
132000+ $0.216




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Electrical Characteristics

Additional Feature HIGH RELIABILITY
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 4.1
Drain Current-Max (ID) 3
Drain-source On Resistance-Max .125
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 3.9
Pulsed Drain Current-Max (IDM) 13.7
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Ma 40
Transistor Application SWITCHING
Transistor Element Material SILICON





Location Stock Delivery
N. America 2000 Ships in 2-3 days
Asia 130000 Ships in 5-7 days