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2N7000 | ST MICROELECTRONICS

ST MICROELECTRONICS 2N7000

Small Signal Field-Effect Transistor,0.35AI(D),60V, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-92

Ordering Info

In Stock: 14060

On Order Qty: 8000

MOQ: 1

Package Quantity: 1


RoHS Compliant
Quantity Cost
100-499 $0.075
500-999 $0.055
1000-7999 $0.041
8000+ $0.035


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Electrical Characteristics

Additional Feature LOW THRESHOLD
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 0.35
Drain Current-Max (ID) 0.35
Drain-source On Resistance-Max 5.3
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON