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BC848CDW1T1G | ON SEMICONDUCTOR

ON SEMICONDUCTOR BC848CDW1T1G

Dual NPN 30 V 100 mA Surface Mount General Purpose Transistor - SOT-363

Ordering Info

In Stock: 6000 Locations

MOQ: 6000

Package Quantity: 3000

Subject to tariff fees

Quantity Cost
6000+ $0.0264




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Electrical Characteristics

Collector Current-Max (IC) 0.1
Collector-emitter Voltage-Max 30
Configuration SEPARATE, 2 ELEMENTS
DC Current Gain-Min (hFE) 420
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.38
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Ma 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100





Location Stock Delivery
Asia 6000 Ships in 5-7 days
*Subject to tariff fees