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FUJI FMC13N60E

Power Field-Effect Transistor, 13A I(D),600V,0.58ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET

Ordering Info

In Stock: 0

MOQ: 1

Lead Time: 16 weeks

Package Quantity: 1

Quantity Cost
1 -

RoHS Compliant

Electrical Characteristics

Avalanche Energy Rating (Eas) 471.5
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600
Drain Current-Max (ID) 13
Drain-source On Resistance-Max .58
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 52
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON





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