Request Quote













Request Quote


IRF5210PBF | INFINEON

Download the free Library Loader to convert this file for your ECAD Tool.

Learn more about ECAD Model here.

INFINEON IRF5210PBF

Single P-Channel 100 V 0.06 Ohm 180 nC HEXFET® Power Mosfet - TO-220-3


Ordering Info

In Stock: 18600 Delivery

MOQ: 150

Package Quantity: 50

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
150-18599 $1.25
18600+ $1.17


Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
Need more Info?

Electrical Characteristics

Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 780
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100
Drain Current-Max (Abs) (ID) 35
Drain Current-Max (ID) 40
Drain-source On Resistance-Max 0.06
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 150
Pulsed Drain Current-Max (IDM) 140
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON