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IRFR5305TRPBF | INFINEON

INFINEON IRFR5305TRPBF

Single P-Channel 55V 0.065 Ohm 63 nC HEXFET Power Mosfet - TO-252AA


Ordering Info

In Stock: 58000 Locations

MOQ: 2000

Package Quantity: 2000

COO: MX

Quantity Cost
2000-57999 $0.4929
58000+ $0.46


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Electrical Characteristics

Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 280
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55
Drain Current-Max (Abs) (ID) 31
Drain Current-Max (ID) 31
Drain-source On Resistance-Max 0.065
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 110
Pulsed Drain Current-Max (IDM) 110
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON