Request Quote













Request Quote


Thank you for your inquiry. We are working on your request and will respond as soon as possible. For immediate inquiries please call 1-866-651-2901

IRLML6401TRPBF | INFINEON

Download the free Library Loader to convert this file for your ECAD Tool.

Learn more about ECAD Model here.

INFINEON IRLML6401TRPBF

Single P-Channel 12 V 0.05 Ohm 10 nC HEXFET® Power Mosfet - MICRO-3


Ordering Info

In Stock: 12000 Locations

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.29.00

ECCN Number: EAR99

COO: CN

Subject to tariff fees

Quantity Cost
3000-11999 $0.0946
12000+ $0.0883


Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
Need more Info?

Electrical Characteristics

Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 33
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 12
Drain Current-Max (Abs) (ID) 4.3
Drain Current-Max (ID) 4.3
Drain-source On Resistance-Max 0.05
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.3
Pulsed Drain Current-Max (IDM) 34
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON