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MT47H128M8CF-25E:H | MICRON SEMICONDUCTOR

MICRON SEMICONDUCTOR MT47H128M8CF-25E:H

DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60


Ordering Info

In Stock: 742

MOQ: 1

Package Quantity: 1

Quantity Cost
1-99 $4.22
100-499 $4.05
500+ $3.98


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Electrical Characteristics

Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.4
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 400
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B60
JESD-609 Code e1
Length 10
Memory Density 1073741824
Memory IC Type DDR DRAM
Memory Width 8
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 134217728
Number of Words Code 128M
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85
Operating Temperature-Min 0
Organization 128MX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA60,9X11,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Power Supplies 1.8
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2
Sequential Burst Length 4,8
Sub Category DRAMs
Supply Current-Max 0.21
Supply Voltage-Max (Vsup) 1.9
Supply Voltage-Min (Vsup) 1.7
Supply Voltage-Nom (Vsup) 1.8
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL
Terminal Pitch 0.8
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Width 8