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MT47H32M16HR-25E:G | MICRON SEMICONDUCTOR

MICRON SEMICONDUCTOR MT47H32M16HR-25E:G

DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84


RoHS Compliant

Ordering Info

In Stock: 268

MOQ: 1

Package Quantity: 1

Quantity Cost
1+ $5.46


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Electrical Characteristics

Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.4
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 400
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84
JESD-609 Code e1
Length 12.5
Memory Density 536870912
Memory IC Type DDR DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 84
Number of Words 33554432
Number of Words Code 32M
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85
Operating Temperature-Min 0
Organization 32MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA84,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Power Supplies 1.8
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2
Sequential Burst Length 4,8
Standby Current-Max 0.007
Sub Category DRAMs
Supply Current-Max 0.215
Supply Voltage-Max (Vsup) 1.9
Supply Voltage-Min (Vsup) 1.7
Supply Voltage-Nom (Vsup) 1.8
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL
Terminal Pitch 0.8
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Width 8