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NTD2955-1G | ON SEMICONDUCTOR

ON SEMICONDUCTOR NTD2955-1G

P-Channel 60 V 155 mOhm 55 W Tab Mount Power MOSFET - TO-252-3

Ordering Info

In Stock: 75

MOQ: 1

Package Quantity: 1

Quantity Cost
1 -



Electrical Characteristics

Avalanche Energy Rating (Eas) 216
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 12
Drain Current-Max (ID) 12
Drain-source On Resistance-Max 0.18
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 55
Pulsed Drain Current-Max (IDM) 36
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Ma NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON





Location Stock Delivery
Florida 75 Ships Immediately