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NTD6414ANT4G | ON SEMICONDUCTOR

ON SEMICONDUCTOR NTD6414ANT4G

NTD6414AN Series 100 V 37 mOhm Surface Mount N-Channel Power Mosfet - TO-252-3

Ordering Info

In Stock: 5000 Locations

MOQ: 2500

Package Quantity: 2500

Subject to tariff fees

Quantity Cost
2500-4999 $0.6143
5000+ $0.5733




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Electrical Characteristics

Avalanche Energy Rating (Eas) 154
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100
Drain Current-Max (Abs) (ID) 32
Drain Current-Max (ID) 32
Drain-source On Resistance-Max 0.037
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100
Pulsed Drain Current-Max (IDM) 117
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Ma 40
Transistor Element Material SILICON





Location Stock Delivery
Asia 5000 Ships in 5-7 days
*Subject to tariff fees