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STB12NM50T4 | ST MICROELECTRONICS

ST MICROELECTRONICS STB12NM50T4

N-Channel 550 V 0.35 Ohm Surface Mount MDmesh™ MosFet - D2PAK

Ordering Info

In Stock: 29000 Locations

MOQ: 1000

Package Quantity: 1000

Subject to tariff fees

Quantity Cost
1000-28999 $3.90
29000+ $3.64




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Electrical Characteristics

Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 400
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500
Drain Current-Max (Abs) (ID) 12
Drain Current-Max (ID) 12
Drain-source On Resistance-Max .35
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 160
Pulsed Drain Current-Max (IDM) 48
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON





Location Stock Delivery
Asia 29000 Ships in 5-7 days
*Subject to tariff fees