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STD4NK80ZT4 | ST MICROELECTRONICS

ST MICROELECTRONICS STD4NK80ZT4

N-Channel 800 V 3.5 O 80 W Surface Mount SuperMESH™ Power MosFet - TO-252

Ordering Info

In Stock: 67500 Locations

MOQ: 2500

Package Quantity: 2500

Subject to tariff fees

Quantity Cost
2500-67499 $0.5143
67500+ $0.48




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Electrical Characteristics

Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 190
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800
Drain Current-Max (Abs) (ID) 3
Drain Current-Max (ID) 3
Drain-source On Resistance-Max 3.5
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 80
Pulsed Drain Current-Max (IDM) 12
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Ma 30
Transistor Application SWITCHING
Transistor Element Material SILICON





Location Stock Delivery
Asia 67500 Ships in 5-7 days
*Subject to tariff fees