0

Request Quote













Request Quote


Thank you for your inquiry. We are working on your request and will respond as soon as possible. For immediate inquiries please call 1-866-651-2901

STF7NM80 | ST MICROELECTRONICS

ST MICROELECTRONICS STF7NM80

Power Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Ordering Info

In Stock: 392 Locations

MOQ: 31

Package Quantity: 1

Quantity Cost
31-391 $6.64
392+ $6.04




Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
Need more Info?

Electrical Characteristics

Avalanche Energy Rating (Eas) 240
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800
Drain Current-Max (Abs) (ID) 6.5
Drain Current-Max (ID) 6.5
Drain-source On Resistance-Max 1.05
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25
Pulsed Drain Current-Max (IDM) 26
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Ma NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON





Location Stock Delivery
N. America 392 Ships in 2-3 days