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ZXMN2B01FTA | DIODES INC.

DIODES INC. ZXMN2B01FTA

ZXMN2B01 Series 20 V 0.1 Ohm N-Channel Enhancement Mode MOSFET - SOT-23

Ordering Info

In Stock: 12000 Locations

MOQ: 3000

Package Quantity: 3000

Quantity Cost
3000-11999 $0.18
12000+ $0.168




Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
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Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20
Drain Current-Max (Abs) (ID) 2.4
Drain Current-Max (ID) 2.1
Drain-source On Resistance-Max .1
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) .806
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Ma 40
Transistor Application SWITCHING
Transistor Element Material SILICON





Location Stock Delivery
N. America 6000 Ships in 2-3 days
Europe 6000 Ships in 3-5 days