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BSS138LT3G | ON SEMICONDUCTOR

ON SEMICONDUCTOR BSS138LT3G

N-Channel 50 V 3.5 Ohm 225 mW Surface Mount Power MOSFET - SOT-23

Ordering Info

In Stock: 260000 Locations

MOQ: 10000

Package Quantity: 10000

Subject to tariff fees

Quantity Cost
10000-259999 $0.024
260000+ $0.0224




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Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50
Drain Current-Max (Abs) (ID) 0.2
Drain Current-Max (ID) 0.2
Drain-source On Resistance-Max 3.5
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.225
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Ma 40
Transistor Application SWITCHING
Transistor Element Material SILICON





Location Stock Delivery
N. America 240000 Ships in 2-3 days
Europe 20000 Ships in 3-5 days
*Subject to tariff fees