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MJD50T4G | ON SEMICONDUCTOR

ON SEMICONDUCTOR MJD50T4G

MJD Series 400 V 1 A NPN Surface Mount Power Transistor - TO-252-3


Ordering Info

In Stock: 5000 Locations

MOQ: 2500

Package Quantity: 2500

COO: CN

Subject to tariff fees

Quantity Cost
2500-4999 $0.1986
5000+ $0.1853


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Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 1
Collector-emitter Voltage-Max 400
Configuration SINGLE
DC Current Gain-Min (hFE) 10
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 15
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 10