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NTR4101PT1G | ON SEMICONDUCTOR

ON SEMICONDUCTOR NTR4101PT1G

P-Channel 20 V 70 mOhm 0.73 W Surface Mount Trench Power MOSFET - SOT-23

Ordering Info

In Stock: 531000 Locations

MOQ: 3000

Package Quantity: 3000

Subject to tariff fees


Quantity Cost
3000-530999 $0.0771
531000+ $0.072


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Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20
Drain Current-Max (Abs) (ID) 1.8
Drain Current-Max (ID) 1.8
Drain-source On Resistance-Max 0.085
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.25
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON