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Product Info
This product is EOL. Please see NAC EOL Notice for Cissoid.pdf
For more information or contact sales@nacsemi.com
- General description
- Applications
- Aeronautics & aerospace
- Industrial
- Well logging
- Automotive
- Features
- Qualified from -55 to +225°C (Tj)
- Operational up to +250°C (Tj)
- Drain voltage up to 30V
- CHT-PMOS3002: Typical output current 2A @ 225°C
- CHT-PMOS3004: Typical output current 4A @ 225°C
- CHT-PMOS3008: Typical output current 8A @ 225°C
- CHT-PMOS3002: RDSon 3.9 @ 225°C
- CHT-PMOS3004: RDSon 2 @ 225°C
- CHT-PMOS3008: RDSon 1 @ 225°C
- VGS = +0.5V to -5.5V
- Reverse ESD diode between gate and source.
- Available in TO254 package
The CHT-PMOS30xx is a family of high voltage P-channel power MOSFET's designed to achieve high performance in an extremely wide temperature range: typical operation temperature goes from -55°C to 225°C.
Electrical Characteristics
Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 80 |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-254 |
JESD-30 Code | S-MSFM-P3 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE |
Package Body Material | METAL |
Package Shape | SQUARE |
Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 13.5 |
Surface Mount | NO |
Terminal Finish | NICKEL |
Terminal Form | PIN/PEG |
Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |