Semiconductors > Diodes > Microwave Mixer Diodes

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Manufacturer AVAGO INFINEON NEXPERIA NXP ON SEMICONDUCTOR ON SEMICONDUCTOR/FAIRCHILD PANASONIC ST MICROELECTRONICS

Additional Feature LOW REVERSE LEAKAGE

Breakdown Voltage-Min 4

Configuration COMMON ANODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SINGLE

Diode Capacitance-Max 1 1.05 1.2 1.4 1.5 2 4

Diode Capacitance-Nom 0.8

Diode Element Material SILICON

Frequency Band C BAND L BAND ULTRA HIGH FREQUENCY VERY HIGH FREQUENCY VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code TO-236 TO-236AA TO-236AB TO-253AA

JESD-30 Code R-PDSO-F2 R-PDSO-F3 R-PDSO-G2 R-PDSO-G3 R-PDSO-G4

JESD-609 Code e0 e3 e6

Moisture Sensitivity Level 1

Noise Figure-Max 8

Non-rep Pk Forward Current-Max 1 2 3

Number of Elements 1 2

Number of Terminals 2 3 4

Operating Temperature-Max 100 125 150 85

Operating Temperature-Min -40 -55 -65

Package Body Material PLASTIC/EPOXY

Package Shape RECTANGULAR

Package Style SMALL OUTLINE

Peak Reflow Temperature (Cel) 240 260 NOT SPECIFIED

Power Dissipation-Max .12 .2 0.12 0.2 0.225 0.25 0.5 0.715

Qualification Status Not Qualified

Reference Standard IEC-60134

Rep Pk Reverse Voltage-Max 15 20 25 30 35 40 70

Reverse Current-Max .25

Sub Category Microwave Mixer Diodes Other Diodes Rectifier Diodes Varactors

Technology PLANAR DOPED BARRIER SCHOTTKY

Terminal Finish Matte Tin (Sn) Tin (Sn) TIN BISMUTH Tin/Bismuth (Sn/Bi) Tin/Lead (Sn/Pb)

Terminal Form FLAT GULL WING

Terminal Position DUAL

Time@Peak Reflow Temperature-Max (s) 30 40 NOT SPECIFIED

Part Number	Description	In Stock
MMBD352LT1 Mfr: on semiconductor	SILICON UHF BAND MIXER DIODE	450
MMBD301LT1G Mfr: on semiconductor/fairchild		8
1PS70SB84,115 Mfr: nexperia	1PS70SB84 Series 15 V 30 mA Surface Mount Schottky Barrier Diode - SOT-323	0
BA592E6327HTSA1 Mfr: infineon	TV AND SAT TUNER DIODES	0
BA592E6327HTSA1 Mfr: infineon	35 V 100 mA 500 mO 1.1 pF Silicon RF Switching Diode - SOD323-2	0
BA891,115 Mfr: nxp	SOD523/BANDSW DIODE / 12NC: 934055282115	0
BAS70-04,215 Mfr: nexperia	BAS70 Series 70V 100 mA Surface Mount General Purpose Schottky Diode -SOT-23	0
BAS70-04FILM Mfr: st microelectronics	SOT 23 DIODES/SOT23 DOU SCHOTT	0
BAS70-05,215 Mfr: nexperia	BAS70 Series 70 V 100 mA Surface Mount General Purpose Schottky Diode -SOT-23	0
BAS70-05FILM Mfr: st microelectronics	SOT 23 CATHODE/SOT23 DOU SCHOTT	0
BAS70-06FILM Mfr: st microelectronics	SOT 23 ANODE C/SOT23 DOU SCHOTT	0
BAS70-06FILM Mfr: st microelectronics	BAS70 Series 70 V 70 mA 1000 mV SMT Schottky Barrier Diode -SOT-23	0
BAS70E6327HTSA1 Mfr: infineon	BAS70 Series 70 V 100 mA Surface Mount Silicon Schottky Diode - SOT-23-3	0
BAT17,215 Mfr: nexperia	BAT17 Series 4 V 30 mA Surface Mount Schottky Barrier Diode - SOT-23	0
HSMS-282C-TR1G Mfr: avago	Mixer Diode, C Band, Silicon	0
MA3X704A Mfr: panasonic	Mixer Diode, L Band, Silicon, TO-236	0
MMBD101LT1G Mfr: on semiconductor	MMBD101LT1 Series 7 V 0.25 uA Surface Mount Schottky Barrier Diode - SOT-23-3	0
MMBD301LT1G Mfr: on semiconductor	MMBD301LT1G Series 30 V 200 nA Surface Mount Silicon Hot-Carrier Diode-SOT-23-3	0
MMBD330T1G Mfr: on semiconductor	MMBD3301 Series 30 V 1 A Surface Mount Schottky Barrier Diodes - SC-70(SOT-323)	0
MMBD701LT1G Mfr: on semiconductor	MMBD701LT1 Series 70 V 200 nA SMT Silicon Hot-Carrier Diode - SOT-23-3	0
MMDL301T1G Mfr: on semiconductor	MMDL301T1 Series 30 V 200 nA Silicon Hot-Carrier Schottky Barrier Diode-SOD-323	0