Search Results For: semiq
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GCMS1P0B120S4B1-N Mfr: semiq |
GCMS1P0B120S4B1-N is a Gen 3, 1200V, 1421A, 1.0mOHM RDS(on), S4 Half Bridge SiC MOSFET power module from SemiQ. Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,350V • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMS1P4B120S4B1 Mfr: semiq |
GCMS1P4B120S4B1 is a Gen 3, 1200V, 813A, 1.4mOHM RDS(on), S4 Half Bridge SiC MOSFET power module from SemiQ. Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,350V • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMS1P4B120S4B1-N Mfr: semiq |
GCMS1P4B120S4B1-N is a Gen 3, 1200V, 1013A, 1.4mOHM RDS(on), S4 Half Bridge SiC MOSFET power module from SemiQ. Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,350V • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMS2P0B120S4B1 Mfr: semiq |
GCMS2P0B120S4B1 is a Gen 3, 1200V, 579A, 2.0mOHM RDS(on), S4 Half Bridge SiC MOSFET power module from SemiQ. Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,350V • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMS2P0B120S4B1-N Mfr: semiq |
GCMS2P0B120S4B1-N is a Gen 3, 1200V, 719A, 2.0mOHM RDS(on), S4 Half Bridge SiC MOSFET power module from SemiQ. Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • Freewheeling SiC SBD with zero reverse recovery • All parts tested to greater than 1,350V • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX003A120S3B1-N Mfr: semiq |
GCMX003A120S3B1-N is a Gen 2, 1200V, 625A, 3.0mOHM RDS(on), S3 Half Bridge SiC MOSFET power module from SemiQ. Features • 62mm standard footprint • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX003A120S7B1 Mfr: semiq |
GCMX003A120S7B1 is a Gen 2, 1200V, 529A, 3mOHM RDS(on), S7 Half Bridge SiC MOSFET power module from SemiQ. Features… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX005A120B3B1P Mfr: semiq |
GCMX005A120B3B1P is a Gen 2, 1200V, 383A, 4.4mOHM RDS(on), B3 Half Bridge SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX005A120S3B1-N Mfr: semiq |
GCMX005A120S3B1-N is a Gen 2, 1200V, 424A, 4.8mOHM RDS(on), S3 Half Bridge SiC MOSFET power module from SemiQ. Features • 62mm standard footprint • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX005A120S7B1 Mfr: semiq |
GCMX005A120S7B1 is a Gen 2, 1200V, 348A, 4.9mOHM RDS(on), S7 Half Bridge SiC MOSFET power module from SemiQ. Features… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX005A170S3B1-N Mfr: semiq |
GCMX005A170S3B1-N is a Gen 2, 1700V, 397A, 5.3mOHM RDS(on), S3 Half Bridge SiC MOSFET power module from SemiQ. Features • 62mm standard footprint • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX007B120B2B1P Mfr: semiq |
GCMX007B120B2B1P is a Gen 3, 1200V, 120A, 7mOHM RDS(on), B2 Half Bridge SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections Benefits • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX007B120B3B1P Mfr: semiq |
GCMX007B120B3B1P is a Gen 3, 1200V, 197A, 7mOHM RDS(on), B3 Half Bridge SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections Benefits • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX007B120B3H1P Mfr: semiq |
GCMX007B120B3H1P is a Gen 3, 1200V, 120A, 7.1mOHM RDS(on), B3 Full Bridge SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections Benefits • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX007C120S1-E1 Mfr: semiq |
GCMX007C120S1-E1 is a Gen 3, 1200V, 192A, 7.4mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ Benefits • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX008B120B3H1P Mfr: semiq |
GCMX008B120B3H1P is a Gen 3, 1200V, 120A, 8.6mOHM RDS(on), B3 Full Bridge SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections Benefits • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX008C120S1-E1 Mfr: semiq |
GCMX008C120S1-E1 is a Gen 3, 1200V, 188A, 8.4mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ Benefits • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX010A120B2B1P Mfr: semiq |
GCMX010A120B2B1P is a Gen 2, 1200V, 214A, 9mOHM RDS(on), B2 Half Bridge SiC MOSFET power module from SemiQ. Features… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX010A120B3B1P Mfr: semiq |
GCMX010A120B3B1P is a Gen 2, 1200V, 173A, 9mOHM RDS(on), B3 Half Bridge SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX010A120B3H1P Mfr: semiq |
GCMX010A120B3H1P is a Gen 2, 1200V, 201A, 8.9mOHM RDS(on), B3 Full Bridge SiC MOSFET power module from SemiQ. Features: • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX010B120S1-E1 Mfr: semiq |
GCMX010B120S1-E1 is a Gen 2, 1200V, 204A, 9mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX014B120B2B1P Mfr: semiq |
GCMX014B120B2B1P is a Gen 3, 1200V, 102A, 14mOHM RDS(on), B2 Half Bridge SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections Benefits • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX014B120B2H2P Mfr: semiq |
GCMX014B120B2H2P is a Gen 3, 1200V, 60A, 14.1mOHM RDS(on), B2 Full Bridge SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX014B120B3H1P Mfr: semiq |
GCMX014B120B3H1P is a Gen 3, 1200V, 95A, 13.5mOHM RDS(on), B3 Full Bridge SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections Benefits • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX014C120S1-E1 Mfr: semiq |
GCMX014C120S1-E1 is a Gen 3, 1200V, 104A, 14.5mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ Benefits • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX015A170S1-E1 Mfr: semiq |
GCMX015A170S1-E1 is a Gen 2, 1700V, 123A, 16mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX016B120B3H1P Mfr: semiq |
GCMX016B120B3H1P is a Gen 3, 1200V, 95A, 16.6mOHM RDS(on), B3 Full Bridge SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections Benefits • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX016C120S1-E1 Mfr: semiq |
GCMX016C120S1-E1 is a Gen 3, 1200V, 103A, 16.5mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 800mJ Benefits • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX017B120B2H2P Mfr: semiq |
GCMX017B120B2H2P is a Gen 3, 1200V, 60A, 15.5mOHM RDS(on), B2 Full Bridge SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX017B120B2T1P Mfr: semiq |
GCMX017B120B2T1P is a Gen 3, 1200V, 30A, 15.6mOHM RDS(on), B2 Six Pack SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX020A120B2B1P Mfr: semiq |
GCMX020A120B2B1P is a Gen 2, 1200V, 102A, 19mOHM RDS(on), B2 Half Bridge SiC MOSFET power module from SemiQ. Features… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX020A120B2H1P Mfr: semiq |
GCMX020A120B2H1P is a Gen 2, 1200V, 102A, 18mOHM RDS(on), B2 Full Bridge SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX020A120B2H2P Mfr: semiq |
GCMX020A120B2H2P is a Gen 2, 1200V, 102A, 18.0mOHM RDS(on), B2 Full Bridge SiC MOSFET power module from SemiQ. Features: • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX020A120B2T1P Mfr: semiq |
GCMX020A120B2T1P is a Gen 3, 1200V, 30A, 19.5mOHM RDS(on), B2 Six Pack SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX020A120B3H1P Mfr: semiq |
GCMX020A120B3H1P is a Gen 2, 1200V, 93A, 18.1mOHM RDS(on), B3 Full Bridge SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX020B120S1-E1 Mfr: semiq |
GCMX020B120S1-E1 is a Gen 2, 1200V, 106A, 20mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX030A170S1-E1 Mfr: semiq |
GCMX030A170S1-E1 is a Gen 2, 1700V, 66A, 31mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Simple to drive • Kelvin reference for stable operation • Avalanche tested to 600mJ… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX034B120B2B1P Mfr: semiq |
GCMX034B120B2B1P is a Gen 3, 1200V, 50A, 33mOHM RDS(on), B2 Half Bridge SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections Benefits • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX034B120B2H2P Mfr: semiq |
GCMX034B120B2H2P is a Gen 3, 1200V, 49A, 34mOHM RDS(on), B2 Full Bridge SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX034B120B2T1P Mfr: semiq |
GCMX034B120B2T1P is a Gen 3, 1200V, 30A, 34mOHM RDS(on), B2 Six Pack SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX034C120S1-E1 Mfr: semiq |
GCMX034C120S1-E1 is a Gen 3, 1200V, 51A, 34mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 330mJ Benefits • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX040A120B2B1P Mfr: semiq |
GCMX040A120B2B1P is a Gen 2, 1200V, 56A, 38mOHM RDS(on), B2 Half Bridge SiC MOSFET power module from SemiQ. Features… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX040A120B2H1P Mfr: semiq |
GCMX040A120B2H1P is a Gen 2, 1200V, 53A, 38mOHM RDS(on), B2 Full Bridge SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX040A120B2H2P Mfr: semiq |
GCMX040A120B2H2P is a Gen 2, 1200V, 56A, 38.0mOHM RDS(on), B2 Full Bridge SiC MOSFET power module from SemiQ. Features: • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX040A120B2T1P Mfr: semiq |
GCMX040A120B2T1P is a Gen 3, 1200V, 30A, 39mOHM RDS(on), B2 Six Pack SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX040A120B3H1P Mfr: semiq |
GCMX040A120B3H1P is a Gen 2, 1200V, 56A, 38mOHM RDS(on), B3 Full Bridge SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX040B120S1-E1 Mfr: semiq |
GCMX040B120S1-E1 is a Gen 2, 1200V, 57A, 37mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. SemiQ SiC MOSFETs have benefits in many applications including PFC Boost Converter, DC-DC Converter Primary Switching and Synchronous rectification. Combined with Silicon Carbide Schottky diode… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX040C120S1-E1 Mfr: semiq |
GCMX040C120S1-E1 is a Gen 3, 1200V, 53A, 39mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 330mJ Benefits • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX072B120B2H2P Mfr: semiq |
GCMX072B120B2H2P is a Gen 3, 1200V, 26A, 72mOHM RDS(on), B2 Full Bridge SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX072B120B2T1P Mfr: semiq |
GCMX072B120B2T1P is a Gen 3, 1200V, 27A, 71mOHM RDS(on), B2 Six Pack SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX080A120B2H1P Mfr: semiq |
GCMX080A120B2H1P is a Gen 2, 1200V, 27A, 77mOHM RDS(on), B2 Full Bridge SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX080A120B2H2P Mfr: semiq |
GCMX080A120B2H2P is a Gen 2, 1200V, 27A, 77mOHM RDS(on), B2 Full Bridge SiC MOSFET power module from SemiQ. Features: • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to above 1350V • Kelvin reference for stable operation • Press fit terminal connections • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX080A120B2T1P Mfr: semiq |
GCMX080A120B2T1P is a Gen 3, 1200V, 29A, 82mOHM RDS(on), B2 Six Pack SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX080B120S1-E1 Mfr: semiq |
GCMX080B120S1-E1 is a Gen 2, 1200V, 30A, 77mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. SemiQ SiC MOSFETs have benefits in many applications including PFC Boost Converter, DC-DC Converter Primary Switching and Synchronous rectification. Combined with Silicon Carbide Schottky diode… It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX080C120S1-E1 Mfr: semiq |
GCMX080C120S1-E1 is a Gen 3, 1200V, 28A, 84mOHM RDS(on), SOT-227 SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • All parts tested to greater than 1,400V • Kelvin reference for stable operation • Isolated backplate • Avalanche tested to 160mJ Benefits • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX1P0B120S4B1 Mfr: semiq |
GCMX1P0B120S4B1 is a Gen 3, 1200V, 1186A, 1.0mOHM RDS(on), S4 Half Bridge SiC MOSFET power module from SemiQ. Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • All parts tested to greater than 1,350V • Kelvin reference for stable operation • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX1P0B120S4B1-N Mfr: semiq |
GCMX1P0B120S4B1-N is a Gen 3, 1200V, 1473A, 1.0mOHM RDS(on), S4 Half Bridge SiC MOSFET power module from SemiQ. Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • All parts tested to greater than 1,350V • Kelvin reference for stable operation • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX1P4B120S4B1 Mfr: semiq |
GCMX1P4B120S4B1 is a Gen 3, 1200V, 811A, 1.4mOHM RDS(on), S4 Half Bridge SiC MOSFET power module from SemiQ. Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • All parts tested to greater than 1,350V • Kelvin reference for stable operation • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX1P4B120S4B1-N Mfr: semiq |
GCMX1P4B120S4B1-N is a Gen 3, 1200V, 1010A, 1.4mOHM RDS(on), S4 Half Bridge SiC MOSFET power module from SemiQ. Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • All parts tested to greater than 1,350V • Kelvin reference for stable operation • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX2P0B120S4B1 Mfr: semiq |
GCMX2P0B120S4B1 is a Gen 3, 1200V, 584A, 2.0mOHM RDS(on), S4 Half Bridge SiC MOSFET power module from SemiQ. Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • All parts tested to greater than 1,350V • Kelvin reference for stable operation • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX2P0B120S4B1-N Mfr: semiq |
GCMX2P0B120S4B1-N is a Gen 3, 1200V, 724A, 2.0mOHM RDS(on), S4 Half Bridge SiC MOSFET power module from SemiQ. Features • 62mm x 152mm industry standard footprint • High speed switching SiC MOSFETs • All parts tested to greater than 1,350V • Kelvin reference for stable operation • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX2P3B120S3B1-N Mfr: semiq |
GCMX2P3B120S3B1-N is a Gen 3, 1200V, 608A, 2.4mOHM RDS(on), S3 Half Bridge SiC MOSFET power module from SemiQ. Features • 62mm standard footprint • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX2P3B120S7B1 Mfr: semiq |
GCMX2P3B120S7B1 is a Gen 3, 1200V, 511A, 2.4mOHM RDS(on), S7 Half Bridge SiC MOSFET power module from SemiQ. Features • 62mm footprint with reduced package height (17 mm) • High speed switching SiC MOSFETs • All parts tested to greater than 1,350V • Kelvin reference for stable operation • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX3P5B120B3B1P Mfr: semiq |
GCMX3P5B120B3B1P is a Gen 3, 1200V, 240A, 3.4mOHM RDS(on), B3 Half Bridge SiC MOSFET power module from SemiQ. Features • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • Press fit terminal connections Benefits • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX3P5B120S3B1-N Mfr: semiq |
GCMX3P5B120S3B1-N is a Gen 3, 1200V, 428A, 3.6mOHM RDS(on), S3 Half Bridge SiC MOSFET power module from SemiQ. Features • 62mm standard footprint • High speed switching SiC MOSFETs • Reliable body diode • All parts tested to greater than 1,350V • Kelvin reference for stable operation • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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GCMX3P5B120S7B1 Mfr: semiq |
GCMX3P5B120S7B1 is a Gen 3, 1200V, 361A, 3.6mOHM RDS(on), S7 Half Bridge SiC MOSFET power module from SemiQ. Features • 62mm footprint with reduced package height (17 mm) • High speed switching SiC MOSFETs • All parts tested to greater than 1,350V • Kelvin reference for stable operation • It is suited to high-efficiency power conversion, motor drives, charging, renewable-energy, and industrial power systems. | 0 |
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AS2T030A170H Mfr: semiq |
AS2T030A170H is a Gen 2, 1700V, 83A, 31mOHM RDS(on), TO-247-4L SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 The high-speed QSiC™ 1700 V switching planar D-MOSFETs enable more compact system designs at large scale… It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP2T020A120H Mfr: semiq |
GP2T020A120H is a Gen 2, 1200V, 119A, 18mOHM RDS(on), TO-247-4L SiC MOSFET from SemiQ. SemiQ SiC MOSFETs have benefits in many applications including Power Factor Correction, DC-DC Converter Primary Switching and Synchronous rectification. Combined with Silicon Carbide Schottky diodes… It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP2T030A170H Mfr: semiq |
GP2T030A170H is a Gen 2, 1700V, 83A, 31mOHM RDS(on), TO-247-4L SiC MOSFET from SemiQ. Features • High speed switching • Reliable body diode • All parts tested to greater than 1,900V • Avalanche tested to 600mJ • Driver source pin for gate driving Benefits • Lower capacitance • It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP2T040A120H Mfr: semiq |
GP2T040A120H is a Gen 2, 1200V, 63A, 37mOHM RDS(on), TO-247-4L SiC MOSFET from SemiQ. SemiQ SiC MOSFETs have benefits in many applications including Power Factor Correction, DC-DC Converter Primary Switching and Synchronous rectification. Combined with Silicon Carbide Schottky diodes… It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP2T040A120J Mfr: semiq |
GP2T040A120J is a Gen 2, 1200V, 66A, 38mOHM RDS(on), TO-263-7L SiC MOSFET from SemiQ. SemiQ has engineered this MOSFET to provide the best trade-off of conduction and switching losses to benefit the widest possible range of applications. SiC MOSFETs bring high efficiency to high… It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP2T040A120U Mfr: semiq |
GP2T040A120U is a Gen 2, 1200V, 63A, 37mOHM RDS(on), TO-247-3L SiC MOSFET from SemiQ. SemiQ SiC MOSFETs have benefits in many applications including Power Factor Correction, DC-DC Converter Primary Switching and Synchronous rectification. Combined with Silicon Carbide Schottky diodes… It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP2T080A120H Mfr: semiq |
GP2T080A120H is a Gen 2, 1200V, 35A, 77mOHM RDS(on), TO-247-4L SiC MOSFET from SemiQ. SemiQ SiC MOSFETs have benefits in many applications including Power Factor Correction, DC-DC Converter Primary Switching and Synchronous rectification. Combined with Silicon Carbide Schottky diodes… It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP2T080A120J Mfr: semiq |
GP2T080A120J is a Gen 2, 1200V, 35A, 77mOHM RDS(on), TO-263-7L SiC MOSFET from SemiQ. SemiQ has engineered this MOSFET to provide the best trade-off of conduction and switching losses to benefit the widest possible range of applications. SiC MOSFETs bring high efficiency to high… It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP2T080A120U Mfr: semiq |
GP2T080A120U is a Gen 2, 1200V, 35A, 77mOHM RDS(on), TO-247-3L SiC MOSFET from SemiQ. SemiQ SiC MOSFETs have benefits in many applications including Power Factor Correction, DC-DC Converter Primary Switching and Synchronous rectification. Combined with Silicon Carbide Schottky diodes… It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP3T014A120H Mfr: semiq |
GP3T014A120H is a Gen 3, 1200V, 133A, 14mOHM RDS(on), TO-247-4L SiC MOSFET from SemiQ. Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 800mJ • Driver source pin for gate driving Benefits • Lower capacitance • It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP3T016A120H Mfr: semiq |
GP3T016A120H is a Gen 3, 1200V, 132A, 16mOHM RDS(on), TO-247-4L SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 Features: • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP3T016A120TS Mfr: semiq |
GP3T016A120TS is a Gen 3, 1200V, 101A, 16mOHM RDS(on), TSPAK SiC MOSFET from SemiQ. Features • High speed switching • All parts tested to greater than 1,400V • Avalanche tested to 800mJ • Driver source pin for gate driving • Ceramic isolated back paddle Benefits • Top side cooling • It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP3T017A120H Mfr: semiq |
GP3T017A120H is a Gen 3, 1200V, 120A, 15mOHM RDS(on), TO-247-4L SiC MOSFET from SemiQ. Features Benefits Applications… It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP3T020A120H Mfr: semiq |
GP3T020A120H is a Gen 3, 1200V, 115A, 18mOHM RDS(on), TO-247-4L SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP3T020A120T Mfr: semiq |
GP3T020A120T is a Gen 3, 1200V, 122A, 18mOHM RDS(on), TCPAK SiC MOSFET from SemiQ. Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 700mJ • Driver source pin for gate driving Benefits • Lower capacitance • It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP3T020A120TS Mfr: semiq |
GP3T020A120TS is a Gen 3, 1200V, 89A, 18mOHM RDS(on), TSPAK SiC MOSFET from SemiQ. Features • High speed switching • All parts tested to greater than 1,400V • Avalanche tested to 700mJ • Driver source pin for gate driving • Ceramic isolated back paddle Benefits • Top side cooling • It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP3T034A120H Mfr: semiq |
GP3T034A120H is a Gen 3, 1200V, 62A, 32mOHM RDS(on), TO-247-4L SiC MOSFET from SemiQ. Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 330mJ • Driver source pin for gate driving Benefits • Lower capacitance • It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP3T040A120H Mfr: semiq |
GP3T040A120H is a Gen 3, 1200V, 62A, 38mOHM RDS(on), TO-247-4L SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 Features: • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP3T040A120T Mfr: semiq |
GP3T040A120T is a Gen 3, 1200V, 64A, 38mOHM RDS(on), TCPAK SiC MOSFET from SemiQ. Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 330mJ • Driver source pin for gate driving Benefits • Lower capacitance • It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP3T040A120TS Mfr: semiq |
GP3T040A120TS is a Gen 3, 1200V, 50A, 38mOHM RDS(on), TSPAK SiC MOSFET from SemiQ. Features • High speed switching • All parts tested to greater than 1,400V • Avalanche tested to 330mJ • Driver source pin for gate driving • Ceramic isolated back paddle Benefits • Top side cooling • It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP3T040A120U Mfr: semiq |
GP3T040A120U is a Gen 3, 1200V, 62A, 38mOHM RDS(on), TO-247-3L SiC MOSFET from SemiQ. Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 330mJ Benefits • Lower capacitance • Higher system efficiency • It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP3T072A120H Mfr: semiq |
GP3T072A120H is a Gen 3, 1200V, 31A, 71mOHM RDS(on), TO-247-4L SiC MOSFET from SemiQ. Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 160mJ • Driver source pin for gate driving Benefits • Lower capacitance • It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP3T080A120H Mfr: semiq |
GP3T080A120H is a Gen 3, 1200V, 32A, 80mOHM RDS(on), TO-247-4L SiC MOSFET from SemiQ. Qualified for Automotive Applications. Product Validation according to AEC-Q101 Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP3T080A120J Mfr: semiq |
GP3T080A120J is a Gen 3, 1200V, 33A, 80mOHM RDS(on), TO-263-7L SiC MOSFET from SemiQ. Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 160mJ • Driver source pin for gate driving Benefits • Lower capacitance • It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP3T080A120T Mfr: semiq |
GP3T080A120T is a Gen 3, 1200V, 33A, 80mOHM RDS(on), TCPAK SiC MOSFET from SemiQ. Features • High speed switching • Reliable body diode • All parts tested to greater than 1,400V • Avalanche tested to 160mJ • Driver source pin for gate driving Benefits • Lower capacitance • It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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GP3T080A120TS Mfr: semiq |
GP3T080A120TS is a Gen 3, 1200V, 27A, 80mOHM RDS(on), TSPAK SiC MOSFET from SemiQ. Features • High speed switching • All parts tested to greater than 1,400V • Avalanche tested to 160mJ • Driver source pin for gate driving • Ceramic isolated back paddle Benefits • Top side cooling • It is designed for efficient high-frequency switching in power supplies, inverters, motor drives, and charging systems. | 0 |
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