Request Quote













Request Quote


1N5626 | NTE

NTE 1N5626

Rectifier Diode, Avalanche, 1 Phase, 1Element,3A,600V V(RRM), Silicon


Ordering Info

In Stock: 102

MOQ: 1

Package Quantity: 1

HTS Code: 8541.10.0080

ECCN: EAR99

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
1 -

Electrical Characteristics

Additional Feature METALLURGICALLY BONDED
Application GENERAL PURPOSE
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1
JESD-30 Code E-LALF-W2
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 100
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 175
Operating Temperature-Min -55
Output Current-Max 3
Package Body Material GLASS
Package Shape ELLIPTICAL
Package Style LONG FORM
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 600
Reverse Recovery Time-Max 6
Sub Category Rectifier Diodes
Surface Mount NO
Technology AVALANCHE
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) 30