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1N5627-TAP | VISHAY

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VISHAY 1N5627-TAP

PowerField-EffectTransistor,5AI(D),55V,0.04ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET


Ordering Info

In Stock: 0

MOQ: 2500

Package Quantity: 2500

ECCN: EAR99

Quantity Cost
2500 -

Electrical Characteristics

Additional Feature METALLURGICALLY BONDED
Application GENERAL PURPOSE
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1
JESD-30 Code E-LALF-W2
Non-rep Pk Forward Current-Max 100
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 175
Operating Temperature-Min -55
Output Current-Max 3
Package Body Material GLASS
Package Shape ELLIPTICAL
Package Style LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 800
Reverse Recovery Time-Max 6
Sub Category Rectifier Diodes
Surface Mount NO
Technology AVALANCHE
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED