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1SMB10CAT3G | ON SEMICONDUCTOR

ON SEMICONDUCTOR 1SMB10CAT3G

Trans Voltage Suppressor Diode, 600W,10VV(RWM),Bidirectional, 1 Element, Silicon


RoHS Compliant

Ordering Info

In Stock: 542

MOQ: 1

Package Quantity: 1

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
1 -

Electrical Characteristics

Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE, HIGH RELIABILITY, UL RECOGNIZED
Breakdown Voltage-Max 12.3
Breakdown Voltage-Min 11.1
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 600
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity BIDIRECTIONAL
Power Dissipation-Max 0.55
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 10
Surface Mount YES
Technology ZENER
Terminal Finish TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40