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2N3700 | MICROSEMI

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MICROSEMI 2N3700

2N3700: 1 A 80 V Through Hole Low Power NPN Silicon Transistor - TO-18-3


Ordering Info

In Stock: 0

MOQ: 1

Package Quantity: 1

ECCN: EAR99

Quantity Cost
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Electrical Characteristics

Additional Feature LOW NOISE
Collector Current-Max (IC) 1
Collector-emitter Voltage-Max 80
Configuration SINGLE
DC Current Gain-Min (hFE) 15
JEDEC-95 Code TO-18
JESD-30 Code O-MBCY-W3
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 200
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 1.8
Power Dissipation-Max (Abs) 0.5
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form WIRE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100
VCEsat-Max 0.5