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2N3866 | CENTRAL SEMICONDUCTOR

CENTRAL SEMICONDUCTOR 2N3866

RF Small Signal Bipolar Transistor,0.4AI(C),1-Element, High Frequency Band, Silicon,NPN,TO-39


Ordering Info

In Stock: 3

MOQ: 1

Lead Time: 12 weeks

Package Quantity: 1

HTS Code: 8541.29.0095

ECCN: EAR99

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
1+ $2.03


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Electrical Characteristics

Collector Current-Max (IC) 0.4
Collector-base Capacitance-Max 3
Collector-emitter Voltage-Max 30
Configuration SINGLE
DC Current Gain-Min (hFE) 10
Highest Frequency Band HIGH FREQUENCY BAND
JEDEC-95 Code TO-39
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 200
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 5
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form WIRE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 500