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2N5415 | ST MICROELECTRONICS

ST MICROELECTRONICS 2N5415

Small Signal Bipolar Transistor, 1AI(C),200VV(BR)CEO, 1-Element, PNP, Silicon, TO-39


Ordering Info

In Stock: 20

MOQ: 1

Package Quantity: 1

HTS Code: 8541.10.0080

ECCN: EAR99

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*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
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Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 1
Collector-base Capacitance-Max 25
Collector-emitter Voltage-Max 200
Configuration SINGLE
DC Current Gain-Min (hFE) 30
JEDEC-95 Code TO-39
JESD-30 Code O-MBCY-W3
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 200
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP
Power Dissipation Ambient-Max 10
Power Dissipation-Max (Abs) 10
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form WIRE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 15
VCEsat-Max 2.5