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2N6034G | ON SEMICONDUCTOR

ON SEMICONDUCTOR 2N6034G

2N Series 40 V 4 A Darlington Complementary Silicon Power Transistor - TO-225


Ordering Info

In Stock: 1000 Delivery

MOQ: 500

Package Quantity: 500

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
500-999 $0.875
1000+ $0.8077


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Electrical Characteristics

Collector Current-Max (IC) 4
Collector-emitter Voltage-Max 40
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 100
JEDEC-95 Code TO-225AA
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 1.5
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 25