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2N6123 | CENTRAL SEMICONDUCTOR

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CENTRAL SEMICONDUCTOR 2N6123

Power Bipolar Transistor, 4A I(C),80VV(BR)CEO,1-Element, NPN, Silicon,TO-220AB,Plastic/Epoxy, 3Pin


Ordering Info

In Stock: 10

MOQ: 1

Lead Time: 12 weeks

Package Quantity: 1

Quantity Cost
1+ $2.10


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Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 4
Collector-emitter Voltage-Max 80
Configuration SINGLE
DC Current Gain-Min (hFE) 20
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 40
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 2.5