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2N6660 | VISHAY/SPRAGUE

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VISHAY/SPRAGUE 2N6660

Small Signal Field-Effect Transistor,0.99AI(D),60V, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-205AD


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 500

Package Quantity: 500

HTS Code: 8542.39.0001

ECCN: EAR99

COO: TH

Quantity Cost
500 -

Electrical Characteristics

Additional Feature LOW THRESHOLD
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 2
Drain Current-Max (ID) 0.99
Drain-source On Resistance-Max 3
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10
JEDEC-95 Code TO-205AD
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 6.25
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON