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2N7000 | ST MICROELECTRONICS

ST MICROELECTRONICS 2N7000

Small Signal Field-Effect Transistor,0.35AI(D),60V, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET, TO-92


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 1

Package Quantity: 1

HTS Code: 8541.21.0095

ECCN: EAR99

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
100-499 $0.075
500-999 $0.055
1000-7999 $0.041
8000+ $0.035


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Electrical Characteristics

Additional Feature LOW THRESHOLD
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 0.35
Drain Current-Max (ID) 0.35
Drain-source On Resistance-Max 5.3
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON