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2N7002-7-F | DIODES INC.

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DIODES INC. 2N7002-7-F

N-Channel 60 V 7.5 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3


Ordering Info

In Stock: 0

MOQ: 61000

Package Quantity: 500

HTS Code: 8541.21.0095

ECCN: EAR99

Quantity Cost
61000 -

Electrical Characteristics

Additional Feature HIGH RELIABILITY, LOW THRESHOLD
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) .115
Drain Current-Max (ID) .115
Drain-source On Resistance-Max 13.5
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) .3
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON