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2N7002A-7 | DIODES INC.

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DIODES INC. 2N7002A-7

N-Channel 60 V 60 Ohm Surface Mount Enhancement Mode Mosfet - SOT-23-3


Ordering Info

In Stock: 2000

MOQ: 6000

Package Quantity: 3000

HTS Code: 8541.21.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
6000+ $0.046


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Electrical Characteristics

Additional Feature HIGH RELIABILITY
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) .115
Drain Current-Max (ID) .115
Drain-source On Resistance-Max 6
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) .25
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON