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2N7002BKV,115 | NEXPERIA

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NEXPERIA 2N7002BKV,115

2N7002BKV Series Dual N-Channel 60V 1.6 Ohm 350 mW 0.6nC TrenchMOS FET - SOT-666


Ordering Info

In Stock: 8000 Delivery

MOQ: 4000

Package Quantity: 4000

HTS Code: 8541.21.00

ECCN: EAR99

COO: MY

Quantity Cost
4000-7999 $0.0854
8000+ $0.0797


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Electrical Characteristics

Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (ID) 0.34
Drain-source On Resistance-Max 1.6
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON